Electronics

Scholar Year: 2019/2020 - 1S

Courses

Head Teacher Responsability Victor Manuel Esteves Antunes Head

Weekly workload Hours/week T TP P PL L TC THE EL OT OT/PL TPL S Type of classes 4 2 Lectures Type Teacher Classes Hours Theorethical and Practical classes Totals 1 4,00 Victor Antunes   4,00 Prática Laboratorial Totals 1 2,00 Filipe Cardoso   2,00

Teaching language

Portuguese

Intended learning outcomes (Knowledges, skills and competencies to be developed by the students)

In this course unit are studied the basic semiconductor components: Diodes, Bipolar Junction Transistors (BJT) and Field Effect Transistors (MOSFET).

It intends to develop capacities for analysis, design, and execution of low complexity electronic circuits.

Syllabus

Junction Diodes
Semiconductor concept. Intrinsic and extrinsic semiconductor. PN junction. Non-polarized PN junction. directly polarized PN junction. reverse polarized PN junction. Diode current-voltage characteristic. Diode symbols. Diode piecewise linear model, Diode piecewise linear model simplified, Diode ideal model. Diode applications. Dynamic resistance of the diode. Special diodes.

Bipolar Junction Transistor (BJT)
Bipolar junction transistor (BJT). BJT NPN. BJT PNP. The symbology of NPN and PNP transistors. BJT current-voltage characteristic. Operation modes of the BJT: ZAD (Direct Active Zone), ZS (Saturation Zone), ZC (Cut Zone), ZAI (Reverse Active Zone). BJT models for the various modes of operation. Early effect. Basic BJT assembly configurations and bias configurations. Determination of reste operating point, Q-point. BJT as a switch. BJT as an amplifier (EC). Compensation of the temperature effect (Common emitter). The function of the coupling and contour capacitors (Common Transmitter). The design of polarization configurations.

Transistor Metal Oxide Semiconductor (MOSFET)
Transistor Metal Oxide Semiconductor (MOSFET) channel N. Transistor Metal Oxide Semiconductor (MOSFET) channel P. Characteristic curves of MOSFET. Enrichment and depletion MOSFET. Used symbologies for FET devices. Modes of operation of field effect transistors. MOSFET models for the various modes of operation. Determination of rest operating point, Q-point. DC load line. Polarization configurations. MOSFET used as a switch. The design of polarization configurations. Amplifiers using MOSFET.

Software

http://www.electronics-lab.com/downloads/circutedesignsimulation/?page=5

Teaching methodologies

The students attend classes of exposition and discussion of the subjects studied in this course unit, they exercise the acquired knowledge in classes dedicated to the resolution of exercises proposed by the teacher and execute 5 practical works in the laboratory.

Assessment methodologies and evidences

The final classification is obtained by the sum of 60% of the classification obtained in the Theoretical Exam, or in the average of the classifications in three Tests, with 40 % of the classification obteained in the Laboratory, according to the formula (1).

N_F = 0,6N_T + 0,4N_L (1)

were:
-N_F represents the final grade.
-N_T represents the grade obtained in the exam or the average of the tests.
-N_Lrepresents the grade obtained in the Laboratory.


If N_T is less than 8 the student fails in this course unit

If N_L is less than 10 the student fails in this course unit

Attendance system

To obtain attendance the students must submit the reports of the five proposed works.

Primary Bibliography

Secondary Bibliography