Electronics I

Scholar Year: 2019/2020 - 1S

Courses

Head Teacher Responsability José Inácio Pinto Rosado Rocha Head

Weekly workload Hours/week T TP P PL L TC EL OT TPL THE S Type of classes 3 2 Lectures Type Teacher Classes Hours Theorethical and Practical classes Totals 1 3,00 José Rocha   3,00 Prática Laboratorial Totals 1 2,00 Ana Antunes   4,00

Teaching language

Portuguese

Intended learning outcomes (Knowledges, skills and competencies to be developed by the students)

In this curricular unit the basic semiconductor components are studied: Diodes, Bipolar Junction Transistors (BJT) and Field Effect Transistors (MOSFET).

Syllabus

Junction Diodes
Semiconductor concept. Intrinsic and extrinsic semiconductor. PN junction. PN junction not polarized. PN junction directly polarized. Reverse polarization of the PN junction. Conventional sense of voltage and current in the diode. V-I characteristic of the diode. Diode symbols. Linear model by sections, Linear model by simplified sections, Ideal diode model. Diode applications. Dynamic resistance of the diode. Special diodes.

Bipolar Junction Transistor (BJT)
Bipolar junction transistor (BJT). BJT NPN. BJT PNP. The symbology of NPN and PNP transistors. Modes of operation of the transistors: ZAD (Direct Active Zone), ZS (Saturation Zone), ZC (Cut Zone), ZAI (Reverse Active Zone). BJT models for the various modes of operation. Early effect. BJT characteristic curves, Basic BJT assembly configurations and bias. Determination of operating mode. Operating point at rest (Q). BJT as a switch. BJT as an amplifier (C.E). Temperature effect compensation (C.E.). BJT model for small signals in the medium frequencies. The function of coupling and contour capacitors (C.E). Design of polarization circuits.

Transistor Metal Oxide Semiconductor (MOSFET)
Transistor Metal Oxide Semiconductor (MOSFET) channel N. Transistor Metal Oxide Semiconductor (MOSFET) channel P. Characteristic curves of MOSFET. Enrichment and depletion MOSFET. Most used symbologies for FET. Modes of operation of the field effect transistors. MOSFET models for the various modes of operation. Determination of operating mode. Working Point(Q). Polarization circuits. FET as a switch. Design of polarizing circuits. The MOSFET as an amplifier. MOSFET model for small signals in the medium frequencies. A brief reference to the Junction Field Effect Transistor (JFET).

Teaching methodologies

Distributed evaluation without final exam.

Assessment methodologies and evidences

Theoretical Exam, or average of the classifications in two Tests (65%)
Average Laboratory Classifications (35%)

The classification of less than 10 Values ​​in the Examination implies failure in the CU.

The classification of less than 10 values ​​in the laboratory component implies failure in the CU.

Attendance system

To obtain attendance, the student must first prepare each one of five laboratory studies and deliver at the end of each laboratory tables and/or graphs related to the experimental assemblies.

Assement and Attendance registers

Primary Bibliography

Secondary Bibliography

Observations

Additional information on the assessment components, please consult the course sheet available on the moodle platform.