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Introduction to Electronics
Scholar Year: 2019/2020 - 2S
| Code: |
LACI12007 |
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Acronym: |
IE |
| Scientific Fields: |
Electrónica e Telecomunicações |
Courses
| Acronym |
N. of students |
Study plan |
Curricular year |
ECTS |
Contact time |
Total Time |
| EACI |
94 |
|
1º |
6,0 |
60 |
160,0 |
Teaching language
Portuguese
Intended learning outcomes (Knowledges, skills and competencies to be developed by the students)
In this curricular unit the basic semiconductor components are studied: Diodes, Bipolar Junction Transistors (BJT) and Field Effect Transistors (MOSFET).
It intends to develop capacities of analysis, design and execution of some electronic circuits of low complexity
Syllabus
Junction Diodes
Semiconductor concept. Intrinsic and extrinsic semiconductor. PN junction. PN junction not polarized. PN junction directly polarized. Reverse polarization of the PN junction. Conventional sense of voltage and current in the diode. V-I characteristic of the diode. Diode symbols. Linear model by sections, Linear model by simplified sections, Ideal diode model. Diode applications. Dynamic resistance of the diode. Special diodes.
Bipolar Junction Transistor (BJT)
Bipolar junction transistor (BJT). BJT NPN. BJT PNP. The symbology of NPN and PNP transistors. Modes of operation of the transistors: ZAD (Direct Active Zone), ZS (Saturation Zone), ZC (Cut Zone), ZAI (Reverse Active Zone). BJT models for the various modes of operation. Early effect. BJT characteristic curves, Basic BJT assembly configurations and bias. Determination of operating mode. Operating point at rest (Q). BJT as a switch. BJT as an amplifier (C.E). Temperature effect compensation (C.E.). BJT model for small signals in the medium frequencies. The function of coupling and contour capacitors (C.E). Design of polarization circuits.
Transistor Metal Oxide Semiconductor (MOSFET)
Transistor Metal Oxide Semiconductor (MOSFET) channel N. Transistor Metal Oxide Semiconductor (MOSFET) channel P. Characteristic curves of MOSFET. Enrichment and depletion MOSFET. Most used symbologies for FET. Modes of operation of the field effect transistors. MOSFET models for the various modes of operation. Determination of operating mode. Working Point (Q). Polarization circuits. FET as a switch. Design of polarizing circuits. The MOSFET as an amplifier. MOSFET model for small signals in the medium frequencies. A brief reference to the Junction Field Effect Transistor (JFET).
Software
PSpice Student
Orcad Capture 9.1
Demonstration of the syllabus coherence with the UC intended learning outcomes
Theoretical / Practical Classes: Interactive demonstration and demonstration method with resolution of exercises;
Laboratory classes: Experimental method applied to the development of circuits and systems based on the knowledge acquired in the theoretical / practical classes.
Teaching methodologies
Distributed evaluation without final exam.
Assessment methodologies and evidences
Theoretical Exam, or average of the classifications in two Tests (70%)
Average Laboratory Classifications (30%)
The classification in the average of the tests less than 10 values implies the non approval in the CU. The minimum grade in each of the tests is 8 values.
The classification in the final exam less then 10 values implies the reprobation in the CU.
The classification of less than 10 values in the laboratory component implies failure in the CU.
It is not possible to take more than one test on each evaluation date, so that a student who fails a single test can only recover that test on the date of the normal exam. If you fail in both tests, your theoretical evaluation will be sent to the exam;
Attendance system
To obtain attendance, the student must first prepare each one of five laboratory studies and deliver at the end of each laboratory tables and/or graphs related to the experimental assemblies.
Assement and Attendance registers
| Description |
Type |
Time (hours) |
End Date |
| Attendance (estimated) |
Classes |
30 |
|
| Preparation/Accessement |
Test/Exam |
15 |
|
| Study/Autonomous work |
Study |
95 |
|
| Exercices resolution |
Study |
16 |
|
| Micro tests/Exams |
Test/Exam |
6 |
|
| |
Total: |
162 |
Primary Bibliography
Boylestad / Nashelsky;Electronic Devices and Circuit Theory, Prentice-Hall, 7th Edition,, 1972 |
Secondary Bibliography
Medeiros da Silva;Introdução aos circuitos eléctricos e electrónicos, Fundação Calouste Gulbenkian, 1996 |
Medeiros da Silva;Circuitos com Transistores Bipolares e MOS, Fundação Calouste Gulbenkian, 1999 |
Sedra / Smith;Microelectronics Circuits, Oxford University Press, 1998 (4th Edition) |
Observations
Additional information on the assessment components, please consult the course sheet available on the moodle platform.
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